Research lines
Two-Dimensional Materials and Devices. More-than-Moore Applications
we are focus on the acquisition and characterization of two-dimensional materials, such as MoSe2, MoS2, WSe2, WS2, HfS2, hBN, and graphene, using techniques such as mechanical exfoliation and chemical and atomic deposition. These materials will be used to generate 2D semiconductor heterostructures.
Design and Fabrication of CMOS Circuits for IoT, Optoelectronics, Quantum Computing, and Neuromorphic Applications
The goal of this research line is to fabricate control circuits (conditioning, excitation, measurement, signal processing) using CMOS technology, and subsequently perform hybrid integration with two-dimensional active elements.
GaN-Based Devices and Circuits for Power Applications
GaN-based devices operate under much more demanding voltage and temperature conditions compared to traditional silicon-based technologies. GaN High Electron Mobility Transistors (HEMTs) are capable of controlling voltages exceeding 1,200 volts.
Co-Integration of 2D Devices and CMOS Technology
For TMD-CMOS co-integration to become a reality, three main limitations must be addressed in advance: i) wafer-level fabrication of defect-free two-dimensional materials (particularly TMDs), ii) full compatibility of the synthesis process of 2D materials with the CMOS fabrication process, meaning the synthesis temperature of the 2D materials must be compatible with CMOS processes, and iii) contamination must not be introduced into the devices, especially metal contamination, which is highly detrimental to the reliability of MOS devices.